Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n⁺-layer

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n⁺-layer silicon-on-insulator (PBN SOI) is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I), resulting in a high breakdown voltage (BV) for the device. For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm), the E_I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.