Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Based on the numerical simulation and analysis, these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells (QWs) when the InGaN/GaN multilayer barriers are used.