Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO₃ buffer layer

Top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene/1,1'-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO₃ buffer layer between TAPC organic semiconductor layer and source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO₃ thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO₃ thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.