Cite this article:
Wang Yu-Mei, Ren Jun-Feng, Yuan Xiao-Bo, Dou Zhao-Tao, Hu Gui-Chao. The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) systemJ. Chin. Phys. B, 2012, 21(10): 108508.
| Wang Yu-Mei, Ren Jun-Feng, Yuan Xiao-Bo, Dou Zhao-Tao, Hu Gui-Chao. The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) systemJ. Chin. Phys. B, 2012, 21(10): 108508. |
The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system
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Abstract
From experimental results of spin polarized injection and transport in organic semiconductors (OSCs), we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm's law. From the calculations, it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC. Furthermore, the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure. -
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