Cite this article:
Gu Cheng-Yan, Liu Gui-Peng, Shi Kai, Song Ya-Feng, Li Cheng-Ming, Liu Xiang-Lin, Yang Shao-Yan, Zhu Qin-Sheng, Wang Zhan-Guo. Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wellJ. Chin. Phys. B, 2012, 21(10): 107305.
Gu Cheng-Yan, Liu Gui-Peng, Shi Kai, Song Ya-Feng, Li Cheng-Ming, Liu Xiang-Lin, Yang Shao-Yan, Zhu Qin-Sheng, Wang Zhan-Guo. Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wellJ. Chin. Phys. B, 2012, 21(10): 107305.
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Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well
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Abstract
We theoretically study the influence of spacer layer thickness fluctuation (SLTF) on the mobility of a two-dimensional electron gas (2DEG) in the modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well. The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained. The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer. -
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