Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

The resistive switching properties in amorphous Pr_0.67Sr_0.33MnO₃ films deposited by pulsed laser deposition are investigated. Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr_0.67Sr_0.33MnO₃/F:SnO₂ junctions are obtained at room temperature. Dramatically, the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range. The results allocated those two switching types to areas of different defect densities beneath the same electrode. The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role. An interface-effect-related resistance switching is proposed in an amorphous Pr_0.67Sr_0.33MnO₃-based memory cell.