Open-circuit voltage analysis of p–i–n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p–a–SiC:H layers and i–a–Si:H layers to the open circuit voltage of p–i–n type a–Si:H solar cells deposited at a low temperature of 125 ℃. We find that poor quality p–a–SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p–a–SiC:H films optimized at the “low-power regime” under low silane flow rates and high hydrogen dilution conditions.