Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires

One-dimension InAlO₃(ZnO)_m superlattice nanowires were successfully synthesized via chemical vapor deposition. Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the 〈0001〉 direction. The photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires are studied for the first time. The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states. The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region. A new luminescence mechanism is proposed, combined with the special energy band structure of InAlO₃(ZnO)_m.