Luminescence properties of In_xGa_{1 - x}N (x ～ 0.04) films grown by metal organic vapour phase epitaxy

In_xGa_{1 - x}N (x ～ 0.04) films are grown by metal organic vapour phase epitaxy. For the samples grown on GaN directly, the relaxation of InGaN happens when its thickness is beyond a critical value. A broad band is observed in the luminescence spectrum, and its intensity increases with the increasing degree of relaxation. Secondary ion mass spectrometry measurement rules out the possibility of the broad band originating from impurities in InGaN. The combination of the energy-dispersive X-ray spectra and the cathodeluminescence measurements shows that the origin of the broad band is attributed to the indium composition inhomogeneity caused by the phase separation effect. The measurement results of the tensile-strained sample further demonstrate the conclusions.