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  • Cite this article:

    Fang Chao, Sun Li-Feng. The evaluation of temporal electronic structures of nonresonant Raman excited virtual state of thioureaJ. Chin. Phys. B, 2011, 20(4): 043301.
    Fang Chao, Sun Li-Feng. The evaluation of temporal electronic structures of nonresonant Raman excited virtual state of thioureaJ. Chin. Phys. B, 2011, 20(4): 043301.
  • The evaluation of temporal electronic structures of nonresonant Raman excited virtual state of thiourea

    • An algorithm has been introduced to calculate molecular bond polarizabilities of thiourea, which supply essential electronic information about the nonresonant Raman excited virtual states. The main dynamical behaviour of the excited virtual states of thiourea is that the Raman excited electrons tend to flow to the N–H bonds and C–N bonds from the S–C bonds because of the electronic repulsion effect. The difference in Raman excited electron relaxation time of thiourea under 514.5-nm and 325-nm excitations has been observed, which quantitatively shows that the Raman scattering process is dependent on the wavelength of the pumping laser. Finally, the distribution of the electrons at the final stage of relaxation is given out through the comparison between the bond electronic densities of the ground states and the bond polarizabilities after deexcitation.
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