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  • Cite this article:

    Li Nuo, Gao Xin-Dong, Xie Zuo-Ti, Sun Zheng-Yi, Ding Xun-Min, Hou Xiao-Yuan. Negative capacitance in doped bi-layer organic light-emitting devicesJ. Chin. Phys. B, 2011, 20(2): 027306.
    Li Nuo, Gao Xin-Dong, Xie Zuo-Ti, Sun Zheng-Yi, Ding Xun-Min, Hou Xiao-Yuan. Negative capacitance in doped bi-layer organic light-emitting devicesJ. Chin. Phys. B, 2011, 20(2): 027306.
  • Negative capacitance in doped bi-layer organic light-emitting devices

    • This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.
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