An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

This paper studies an oxide/silicon core/shell nanowire MOSFET (OS-CSNM). Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher I_\rm on/I_\rm off ratio after introducing the oxide core into a traditional nanowire MOSFET (TNM). The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.