Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET

This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated on silicon-on-aluminum nitride (SOAN) substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.