Preparation of size controllable copper nanocrystals for nonvolatile memory applications

A method of fabricating Cu nanocrystals embedded in SiO₂ dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.