Temperature-frequency dependence and mechanism of dielectric properties for \gamma-Y₂Si₂O₇

This paper reports that single-phase \gamma -Y₂Si₂O₇ is prepared via a sufficient blending and cold-pressed sintering technique from Y₂O₃ powder and SiO₂ nanopowder. It studies the dielectric properties of \gamma -Y₂Si₂O₇ as a function of the temperature and frequency. The \gamma -Y₂Si₂O₇ exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 ℃ in the range of 7.3--18 GHz. The mechanism for polarization relaxation of the as-prepared \gamma -Y₂Si₂O₇ differing from that of SiO₂ is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.