Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5 MeV) at 360 K. Two groups of samples with low O_i=6.9× 10¹⁷ cm^-3 and high O_i=1.06× 10¹⁸ cm^-3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO₂ in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃, accompanied with the appearing of VO₃. For both kinds of specimens, the concentration of VO₃ reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.