The study of a new n/p tunnel recombination junction and its application in a-Si:H/\muc-Si:H tandem solar cells

This paper reports that a double N layer (a-Si:H/\muc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-\muc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/\muc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current--voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/\muc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.