Cite this article:
Fang Cheng, Wang Zhi-Gang, Li Shu-Shen, Zhang Ping. Orbital magnetization in semiconductorsJ. Chin. Phys. B, 2009, 18(12): 5431-5436.
| Fang Cheng, Wang Zhi-Gang, Li Shu-Shen, Zhang Ping. Orbital magnetization in semiconductorsJ. Chin. Phys. B, 2009, 18(12): 5431-5436. |
Orbital magnetization in semiconductors
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Abstract
This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin--orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin--orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10-2--10-1 effective Bohr magneton and 10-1--1 e2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment. -
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