Cite this article:
Bao Xiao-Qing, Ge Dao-Han, Jiao Ji-Wei. Observation of a diverse deviation from macropore-formation theory in silicon electrochemistryJ. Chin. Phys. B, 2008, 17(8): 3130-3137.
| Bao Xiao-Qing, Ge Dao-Han, Jiao Ji-Wei. Observation of a diverse deviation from macropore-formation theory in silicon electrochemistryJ. Chin. Phys. B, 2008, 17(8): 3130-3137. |
Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry
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Abstract
Via anodizing patterned and unpatterned samples with a high HF concentration (HF), the degree of deviation from pore-formation theory was found to be markedly different. Based on the analysis of scanning electron microscope (SEM) micrographs and current--voltage (I-V) curves, the variation of physical and chemical parameters of patterned and unpatterned substrates was found to be crucial to the understanding of the observations. Our results indicate that the initial surface morphology of samples can have a considerable influence upon pore formation. The electric-field effect as well as current-burst-model was employed to interpret the underlying mechanism. -
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