Growth of \beta-Ga₂O₃ nanorods by ammoniating Ga₂O₃/V thin films on Si substrate

This paper reports that \beta-Ga₂O₃ nanorods have been synthesized by ammoniating Ga₂O₃ films on a V middle layer deposited on Si(111) substrates. The synthesized nanorods were confirmed as monoclinic Ga₂O₃ by x-ray diffraction, Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown \beta-Ga₂O₃ nanorods have a smooth and clean surface with diameters ranging from 100nm to 200 nm and lengths typically up to 2\mum. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga₂O₃ single crystal. The photoluminescence spectrum indicates that the Ga₂O₃ nanorods have a good emission property. The growth mechanism is discussed briefly.