Study of (Ga, Mn)N prepared by Mn-Ion implantation using optical techniques

This paper reports that (Ga, Mn)N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraction(XRD). Detailed XRD measurements have revealed the characteristic of Mn-Ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566 cm^-1 identified as E₁(LO), A₁(LO) and E₂^H, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650--725, 363, 506cm^-1 and the vicinity of E₂^H mode. The modes observed at 182, 288, 650--725 cm^-1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mn_x-N_y, Ga_x-Mn_y modes and the local vibrational mode of Mn atoms in the (Ga, Mn)N, which are in fair agreement with the standard theoretical results.