Si₁Sb₂Te₃ phase change material for chalcogenide random access memory

This paper investigated phase change Si₁Sb₂Te₃ material for application of chalcogenide random access memory. Current--voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge₂Sb₂Te₅ film. Amorphous Si₁Sb₂Te₃ changes to face-centred-cubic structure at \sim 180℃ and changes to hexagonal structure at \sim 270℃. Annealing temperature dependent electric resistivity of Si₁Sb₂Te₃film was studied by four-point probe method. Data retention of the films was characterized as well.