Fabrication and characteristics of high-K HfO₂ gate dielectrics on n-germanium

This paper reports that the high-K HfO₂ gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO₂ gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO₂ gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO₂ gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.