Cite this article:
Zhang Yan-Feng, Jia Jin-Feng, Han Tie-Zhu, Tang Zhe, Shen Quan-Tong, Guo Yang, Xue Qi-Kun. Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well statesJ. Chin. Phys. B, 2005, 14(9): 1910-1914.
| Zhang Yan-Feng, Jia Jin-Feng, Han Tie-Zhu, Tang Zhe, Shen Quan-Tong, Guo Yang, Xue Qi-Kun. Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well statesJ. Chin. Phys. B, 2005, 14(9): 1910-1914. |
Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states
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Abstract
Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers (ML) have been performed within a temperature range 75--270K.Well-defined quantum well states (QWSs) are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSs shifts towards higher binding energy with increasing substrate temperature,whereas the peak width broadens linearly due to enhanced electron--phonon coupling strength (\lambda). An oscillatory \lambda with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can be explained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects. -
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