A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation

Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented,with which the dependence of \tau_\rm c/\tau_\rm e (where \tau_\rm c=capture time, \tau_\rm e=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement.