Cite this article:
Ma Shu-Yi, Chen Hui, Xiao Yong, Ma Zi-Jun, Sun Ai-Min. A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 filmsJ. Chin. Phys. B, 2004, 13(2): 264-267.
Ma Shu-Yi, Chen Hui, Xiao Yong, Ma Zi-Jun, Sun Ai-Min. A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 filmsJ. Chin. Phys. B, 2004, 13(2): 264-267.
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A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films
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Abstract
Ge/SiO_2 and Si/SiO_2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed. -
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