Cite this article:
Liu Fa-Min, Wang Tian-Min, Zhang Li-De. Raman properties of GaSb nanoparticles embedded in SiO2 filmsJ. Chin. Phys. B, 2004, 13(12): 2169-2173.
| Liu Fa-Min, Wang Tian-Min, Zhang Li-De. Raman properties of GaSb nanoparticles embedded in SiO2 filmsJ. Chin. Phys. B, 2004, 13(12): 2169-2173. |
Raman properties of GaSb nanoparticles embedded in SiO2 films
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Abstract
The Raman shifts of nanocrystalline GaSb excited by an Ar^+ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals. -
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