Cite this article:
Zhu Tao, Zhan Wen-Shan, Shen Feng, Zhang Ze, X. H. Xiang, G. Landry, John Q. Xiao. Bulk-like contribution to tunnel magnetoresistance in magnetic tunnel junctionsJ. Chin. Phys. B, 2003, 12(6): 665-668.
| Zhu Tao, Zhan Wen-Shan, Shen Feng, Zhang Ze, X. H. Xiang, G. Landry, John Q. Xiao. Bulk-like contribution to tunnel magnetoresistance in magnetic tunnel junctionsJ. Chin. Phys. B, 2003, 12(6): 665-668. |
Bulk-like contribution to tunnel magnetoresistance in magnetic tunnel junctions
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Abstract
We have demonstrated that the bulk-like contribution to tunnelling magnetoresistance (TMR) exists in the magnetic tunnel junctions, and is determined by the tunnelling characteristic length of the ferromagnetic electrodes. In the experiment, a wedge-shaped CoFe layer is inserted at the interface between the insulating barrier and the reference electrode. It is found that TMR ratio increases from 18% without CoFe layer to a saturation value of 26.5% when the CoFe thickness is about 2.3 nm. The tunnelling characteristic length, l_\rm tc, can be obtained to be about 0.8 nm for CoFe materials. -
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