Cite this article:
Chen Chang-Yong, Chen Wei-De, Li Guo-Hua, Song Shu-Fang, Ding Kun, Xu Zhen-Jia. Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide filmJ. Chin. Phys. B, 2003, 12(4): 438-442.
Chen Chang-Yong, Chen Wei-De, Li Guo-Hua, Song Shu-Fang, Ding Kun, Xu Zhen-Jia. Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide filmJ. Chin. Phys. B, 2003, 12(4): 438-442.
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Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film
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Abstract
An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:Hfilms. -
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