Parameter extraction for a Ti/4H-SiC Schottky diode

Based on the MIS model, a simple method to extract parameters of SiC Schottky diodes is presented using the I-V characteristics. The interface oxide capacitance C_\rm i is extracted for the first time, as far as we know. Parameters of 4H-SiC Schottky diodes fabricated for testing in this paper are: the ideality factor n, the series resistance R_\rm s, the zero-field barrier height \phi_\rm B0, the interface state density D_\rm it, the interface oxide capacitance C_\rm i and the neutral level of interface states \phi_0.