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    Xing Ying-Jie, Yu Da-Peng, Xi Zhong-He, Xue Zeng-Quan. Investigation of the growth process of Si nanowires using the vapour-liquid-solid mechanismJ. Chin. Phys. B, 2002, 11(10): 1047-1050.
    Xing Ying-Jie, Yu Da-Peng, Xi Zhong-He, Xue Zeng-Quan. Investigation of the growth process of Si nanowires using the vapour-liquid-solid mechanismJ. Chin. Phys. B, 2002, 11(10): 1047-1050.
  • Investigation of the growth process of Si nanowires using the vapour-liquid-solid mechanism

    • Silicon nanowires have been grown by the thermal decomposition of silane via the vapour-liquid-solid (VLS) mechanism. Three different stages of VLS growth (eutectic alloy formation, crystal nucleation and unidirectional growth) were studied separately using a scanning electron microscope and a high-resolution transmission electron microscope. Very short silicon nanowires prepared under particular conditions provide direct evidence of the VLS mechanism on a nanometre scale. Our results will be very helpful for the controllable synthesis of Si nanowires.
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