Cite this article:
Xing Ying-Jie, Yu Da-Peng, Xi Zhong-He, Xue Zeng-Quan. Investigation of the growth process of Si nanowires using the vapour-liquid-solid mechanismJ. Chin. Phys. B, 2002, 11(10): 1047-1050.
| Xing Ying-Jie, Yu Da-Peng, Xi Zhong-He, Xue Zeng-Quan. Investigation of the growth process of Si nanowires using the vapour-liquid-solid mechanismJ. Chin. Phys. B, 2002, 11(10): 1047-1050. |
Investigation of the growth process of Si nanowires using the vapour-liquid-solid mechanism
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Abstract
Silicon nanowires have been grown by the thermal decomposition of silane via the vapour-liquid-solid (VLS) mechanism. Three different stages of VLS growth (eutectic alloy formation, crystal nucleation and unidirectional growth) were studied separately using a scanning electron microscope and a high-resolution transmission electron microscope. Very short silicon nanowires prepared under particular conditions provide direct evidence of the VLS mechanism on a nanometre scale. Our results will be very helpful for the controllable synthesis of Si nanowires. -
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