Cite this article:
Pan Liu-xian, Li Shu-shen, Xia Jian-bai. EXCITON ENERGY OF THE InAs/GaAs SELF-ASSEMBLED QUANTUM DOT IN A SEMICONDUCTOR MICROCAVITYJ. Chin. Phys. B, 2001, 10(7): 655-657.
| Pan Liu-xian, Li Shu-shen, Xia Jian-bai. EXCITON ENERGY OF THE InAs/GaAs SELF-ASSEMBLED QUANTUM DOT IN A SEMICONDUCTOR MICROCAVITYJ. Chin. Phys. B, 2001, 10(7): 655-657. |
EXCITON ENERGY OF THE InAs/GaAs SELF-ASSEMBLED QUANTUM DOT IN A SEMICONDUCTOR MICROCAVITY
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Abstract
We report on the theoretical study of the interaction of the quantum dot (QD) exciton with the photon waveguide models in a semiconductor microcavity. The InAs/GaAs self-assembled QD exciton energies are calculated in a microcavity. The calculated results reveal that the electromagnetic field reduces the exciton energies in a semiconductor microcavity. The effect of the electromagnetic field decreases as the radius of the QD increases. Our calculated results are useful for designing and fabricating photoelectron devices. -
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