ANALYSIS OF THE X-RAY PHOTOELECTRON SPECTRA OF a-SiOCF FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION

The preparation of a-SiOCF films from Si(OC₂H₅)₄, C₄F₈ and/or Ar using the plasma-enhanced chemical vapour deposition method is reported. The chemical bonding structures of the films are analysed by x-ray photoelectron spectroscopy (XPS). In the case of the films deposited from the mixture with and without Ar, the configurations of F-Si-O-Si, Si-OH, Si-O-Si, C-CF and C-F are contained. However, there is also the C-C configuration in the film prepared from the mixture with Ar. Moreover, it is found that the photoelectron peaks of Si 2p, O 1s and F 1s for the film deposited from the feeding gas with Ar show the same shift of about 1eV toward high binding energy in comparison with those for the film prepared from the feeding gas without Ar. No evidence reveals the presence of an Si-C bond in the films.