ELECTRONIC STRUCTURE OF BISMUTH MOLYBDENUM OXIDE SINGLE CRYSTAL Bi_0.19MoO₃

Single crystal Bi_0.19MoO₃ has been grown by fused salt electrolytic technique. X-ray powder diffraction shows that the unit cell parameters are: a=1.9985nm, b=0.4085nm and c=1.4437nm. The temperature dependence of resistivity demonstrates a semiconductor characteristic. X-ray photoemission spectroscopy studies provide that the valence band of Bi_0.19MoO₃ are made up of oxygen p_\pi and the \pi^*, \pi and \sigma bonding bands formed by orbital combination. The shoulder at 0.4 eV near the top of valence band may be formed from the non-bonding d_xy orbitals of some Mo atoms. The O1s core-electron spectrum reveals the presence of two inequivalent bonds of oxygen ions in Bi_0.19MoO₃. Bi4f core-level spectrum shows two bonding characters of Bi atoms in bismuth molybdenum oxide single crystals. Mo3d core-level spectrum could be decomposed into two kinds of valence states of molybdenum(Mo⁺⁵ and Mo⁺⁶).