A NONLINEAR MODEL FOR HIGHLY EXCITED VIBRATIONAL ENERGY LEVELS OF SILANE

The highly excited vibrational energy levels of SiH stretches of silane SiH₄ in the electronic ground state are calculated using a three-parameter nonlinear model, i.e., the quantized discrete self-trapping equation. The obtained results are in good agreements with the experimental data and with those obtained from local mode calculations of others. We note that SiH₄ molecule is a typical molecule close to the local mode limit, and that when n≥3, the molecule could be thought of as vibrating with the four SiH stretching quanta trapped into a single SiH bond.