Cite this article:
ZHAO GUO-NIAN, XIAN-YU HAI-QING, SONG JIAN, REN SHANG-YUAN, LI XIAO-BAI. SIZE AND SHAPE DEPENDENCE OF THE LOWEST CONDUCTION BAND STATES IN GaAs QUANTUM DOTSJ. Chin. Phys. B, 1999, 8(11): 845-852.
| ZHAO GUO-NIAN, XIAN-YU HAI-QING, SONG JIAN, REN SHANG-YUAN, LI XIAO-BAI. SIZE AND SHAPE DEPENDENCE OF THE LOWEST CONDUCTION BAND STATES IN GaAs QUANTUM DOTSJ. Chin. Phys. B, 1999, 8(11): 845-852. |
SIZE AND SHAPE DEPENDENCE OF THE LOWEST CONDUCTION BAND STATES IN GaAs QUANTUM DOTS
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Abstract
Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of dlrect/indirect transition in GaAs quantum wires and thin films. -
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