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    Jia Yu, Ma Bing-xian, Shen San-guo, Yang Shi-e. CALCULATION OF ELECTRONIC STATES OF Si(337) SURFACEJ. Chin. Phys. B, 1999, 8(1): 46-51.
    Jia Yu, Ma Bing-xian, Shen San-guo, Yang Shi-e. CALCULATION OF ELECTRONIC STATES OF Si(337) SURFACEJ. Chin. Phys. B, 1999, 8(1): 46-51.
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    • CALCULATION OF ELECTRONIC STATES OF Si(337) SURFACE

      Abstract
    • Using the scattering-theoretic method and employing the nearest-neighbor tight-binding formalism to describe the bulk electronic structure, we have studied the electronic structure of Si(337) surface. The wave-vector-resolved layer densities of states are presented. The results show that there are six surface bound states in the range from -12.0 to 2.0 eV. Some properties of these surface states are discussed.
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