Cite this article:
DONG WEN-FU, YANG QIN-QING, LI JIAN, WANG QI-MING, CHUI QIAN, ZHOU JUN-MING, HUANG QI. ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELLJ. Chin. Phys. B, 1996, 5(6): 456-462.
DONG WEN-FU, YANG QIN-QING, LI JIAN, WANG QI-MING, CHUI QIAN, ZHOU JUN-MING, HUANG QI. ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELLJ. Chin. Phys. B, 1996, 5(6): 456-462.
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ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL
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Abstract
Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed. -
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