Cite this article:
GUO SHI-PING, ZHANG JIA-MING, LIU PU-LIN, SHEN XUE-CHU, YUAN SHI-XIN, J.W. TOMM. STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTeJ. Chin. Phys. B, 1996, 5(5): 370-376.
GUO SHI-PING, ZHANG JIA-MING, LIU PU-LIN, SHEN XUE-CHU, YUAN SHI-XIN, J.W. TOMM. STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTeJ. Chin. Phys. B, 1996, 5(5): 370-376.
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STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTe
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Abstract
HgCdTe epilayers were grown by molecular beam epitaxy on GaAs(211)B substrates. Process of the HgCdTe epitaxial growth can be monitored by reflection high-energy electron diffraction. Results of the infrared transmission spectrum, Raman scattering spectrum and infrared photoluminescence spectrum in magnetic field have been studied. -
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