STUDY ON THE STABILITY OF GaAs/AlGaAs SUPERLATTICE STRUCTURE

This paper reports the stability of GaAs/AlGaAs superlattice structures after theorem annealing, Zn diffusion and MeV Si⁺ ion implantation. The MeV Si⁺ ion implantation induced damage in GaAs/AlGaAs superlattices, its annealing properties, and the effects on superlattice structure stability are reported as well. Thermal annealing at 650℃ for 30min has little effect on superlattice structure. Zn diffusion may induce superlattice layer disordering. And annealing at 650℃ for 30min can eliminate damage caused by 2.3MeV,1.5×10¹⁵ cm^-2 Si⁺ ion implantation, which cannot induce superlattice layer disordering.