RADIATION-INDUCED DEFECTS IN RADIATION HARD AND SOFT OXIDES

The point defects of P_b and E′ in radiation hard and soft Si-SiO₂ samples were examined using electron spin resonance (ESR). The experimental results showed that these defects were correlated with the ways of oxidation process, the dosage of ⁶⁰Co radiation and the radiation bias field. Besides, the \DeltaH (peak of peak) of P_b and E′ indicated that P_b is the defect with slow electron spin relaxation time while E′ is the defect with fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.