STRUCTURE STUDY OF MODULATION-DOPED Cd_1-xMn_xTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd_1-xMn_xTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd_1-xMn_xTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.