Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure
Two-dimensional electric field distribution at reverse bias of 30 V for APD with first-mesa size (a) 5.2 μm, (b) 4 μm, and (c) 1.6 μm.
Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure |
Two-dimensional electric field distribution at reverse bias of 30 V for APD with first-mesa size (a) 5.2 μm, (b) 4 μm, and (c) 1.6 μm. |
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