Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure
Dong Ke-Xiu1, Chen Dun-Jun2, †, Cai Qing2, liu Yan-Li3, Wang Yu-Jie1
       

Simulated two-dimensional electric field distribution for APD with bevel angle of (a) 10°, (b) 20°, (c) 40°, and (d) 60°, and electric field distribution along x direction in multiplication layer at (e) y = 190 nm, (f) y = 280 nm, (g) y = 350 nm with reverse bias 30 V.