Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure
Dong Ke-Xiu1, Chen Dun-Jun2, †, Cai Qing2, liu Yan-Li3, Wang Yu-Jie1
       

(a) IV characteristics in dark and under illumination and gain for AlGaN SAM APD with different bevel angles and FP structure, (b) schematic structure of AlGaN SAM APD without FP, and (c) IV characteristics in dark and under illumination as well as gain for AlGaN SAM APD without FP.