Total dose test with γ-ray for silicon single photon avalanche diodes
Liu Qiaoli1, 2, Zhang Haiyan3, Hao Lingxiang2, Hu Anqi2, Wu Guang3, Guo Xia2, †
       

Time evolution of leakage current after radiation. Leakage current of the unbiased device is traced at 29.7 V at room temperature for 568 hours (red square) and annealed at 200 °C for 2 hours (blue square), after which the leakage current approaches its initial value before radiation (black square).