Total dose test with γ-ray for silicon single photon avalanche diodes
Liu Qiaoli1, 2, Zhang Haiyan3, Hao Lingxiang2, Hu Anqi2, Wu Guang3, Guo Xia2, †
       

Temperature-dependent (a) forward and (b) reverse IV curves. (c) Comparison of measured temperature-dependent ideality factor n and their fitting results before and after radiation. (d) Arrhenius plot of leakage current measured at 20 V and the fitting results as a function of temperature before and after radiation.