Congruent melting of tungsten phosphide at 5 GPa and 3200 °C for growing its large single crystals
Xiang Xiao-Jun1, 2, Song Guo-Zhu3, Zhou Xue-Feng3, Liang Hao1, Xu Yue5, Qin Shi-Jun2, 4, Wang Jun-Pu1, Hong Fang2, Dai Jian-Hong3, Zhou Bo-Wen2, 4, Liang Wen-Jia1, Yin Yun-Yu2, Zhao Yu-Sheng3, Peng Fang1, †, Yu Xiao-Hui2, ‡, Wang Shan-Min3, §
       

(a) XRD patterns of recovered samples synthesized under different high PT conditions. (b) High PT forming region of WP. No reaction is observed below black dashed line. Phase-pure WP occurs above black line. Between the two lines formed is WP with by-products of WP2 and WP4.