Effects of built-in electric field and donor impurity on linear and nonlinear optical properties of wurtzite InxGa1 – xN/GaN nanostructures
Total ACs versus incident photon energy of 1s–1p, 1p–1d, and 1d–1f transitions for various values of the incident optical intensity I in In0.5Ga0.5N/GaN (5 nm/3 nm) CSQDs (a) with Z = 0 and BEF = 0, (b) with Z = 1 and BEF = 0, and (c) with Z = 1 and BEF ≠ 0.
