Effects of built-in electric field and donor impurity on linear and nonlinear optical properties of wurtzite InxGa1 – xN/GaN nanostructures
(a) Total ACs and (b) RICs versus incident photon energy for 1s–1p, 1p–1d, and 1d–1f transitions for Rc = 2.5, 3, and 5 nm in In0.5Ga0.5N/GaN (Rc/3 nm) CSQDs with the impurity and the BEF.
